MICRO-EPSILON Messtechnik GmbH & Co. KG

Manufacturer
Germany
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Manufacturer
Germany
Send request

22.09.2023 01:09

New interferometer for high-precision wafer thickness measurement

The IMS5420-TH white light interferometer opens up new perspectives in industrial thickness measurement of monocrystalline silicon wafers. Thanks to the broadband superluminescent diode (SLED), the IMS5420-TH can be used for undoped and doped as well as highly doped SI wafers. The thickness measurement range extends from 0.05 to 1.05 mm. The measurable thickness of air gaps is even up to 4 mm. The

highest precision is essential in the production of semiconductor wafers

An important process step is the lapping of the blanks, which are thereby brought to a uniform thickness. The white light interferometers of the interferoMETER IMS5420 series were developed to continuously monitor the thickness.

Each of these consists of a compact sensor and a controller housed in a robust industrial-grade housing. An active temperature control integrated in the controller ensures high stability of the measurement.

The interferometer is available as either a thickness or a multipeak thickness measurement system. The multipeak thickness measurement system can measure the thickness of up to five layers, e.g. wafer thickness, air gap, foiling and coatings >50 µm. For thickness measurements in difficult environmental conditions, the IMS5420IP67 controller is available with IP67 and stainless steel housing as well as suitable fiber optics and sensors.

Advantages at a glance

Nanometer-accurate thickness measurement of undoped, doped and highly doped wafers
Multi-peak: detection of up to 5 layers with SI thickness from 0.05 up to 1.05 mm
High resolution in z-axis of 1 nm
Measurement rate up to 6 kHz for fast measurements
Ethernet / EtherCAT / RS422 / PROFINET / EtherNet/IP
Easy parameterization via web interface