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The RIE process (reactive ion etching) is a dry etching process used in electronic and microelectronic manufacturing. Applications are for example fast and ultra high surface cleaning, surface activation, photo-resist stripping and semiconductor etching.
For this process usually a planar plate reactor is used (see figure 1). After generating a gas atmosphere with a pressure of 10-2 to 10-1 mbar the gas discharge (plasma) is ignited by applying an RF voltage. Caused by the different mobility of light electrons and heavy ions in the electric field, a negative DC potential builds up at the smaller electrode (substrate carrier). This self bias potential usually is about 10 to a few hundred volts.